The best performance of the developed nc-Si TFT are6.310-11( A) for leakage current,2.510-5( A) for device driving on current,~106 for on/ off current ratio, and18.58( cm2/ Vs) for drift mobility.
The tristable resonant tunneling devices(RTD)with a double negative differential resistance in its I-V characteristics have a high current ratio(5.