Preparation of Mg and Al co-doped ZnO thin films with tunable band gap
A kind of photonic band gap filter for wavelength division multiplexed is discussed with transfer matrix method.
Although the energy loss of ordinary multi-layer photonic crystal structures is low, the band gap is usually limited, there is also wide-wide Angle high anti-band hard.
Based on photonic band gap theory and plane wave expansion method, the effect of liquid crystal on the conduction change of PCF and filtering properties are researched.
Analysis of photonic band gap in inhomogeneous plasma photonic crystals
The lattice strain and band repulsion affecting band gap is investigated.
If you change the view Angle, the partial photonic band gap will shift to short wavelengths for oblique incidence.
II-VI semiconductors, possessing broad band gap, large exciton binding energy at room temperature, is rationally expected to be promising candidates for nonlinear devices and short wavelength laser.
High band gap materials.
These are photodetectors, band gap two electron volts, respond to visible light.
Many applications of photonic crystals are based on photonic band gaps, and it would thus be very interesting to design a photonic crystal with the largest band gap for a given dielectric contrast.
Main research fields are the preparation and ion implantation studies of advanced functional material films. The focuses are on the material and device characteristics of wide band gap semiconductors.
Research of band gap of two-dimensional photonic crystal with square rods
The photonic band gap of 1-D photonic crystals with graded single refractive index layer is investigated using the method of the characteristic matrix.
The results show that the angle of incidence has effect on band-gap width and central wavelength of band gap .
The optical element forms dual mode structure in low symmetry. The invention raises structural performance band gap of photon crystal, and obtains even structure of photon crystal in large area.
The place that exists in PBG structures is similar with the bandgap in semiconductor called photonic band gap.
Electronic band structure calculations show that sc-C20 is a semiconductor with wide band gap of 4.20 eV, and the gap increase with pressure, similar to that of diamond.
Results indicate that the optical band gap of the CN x films is decreased with the increasing nitrogen concentration, accompanied with the reflectance increase of the films.
Study on photonic band gap structure using nonorthogonal FDTD method;
Temperature dependence of band gap of CdSe colloidal nanocrystals
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