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“amorphous silicon”簡單造句,amorphous silicon造句子

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The influence of interface state on the characters of PIN-type amorphous silicon solar cells

Objective To investigate the optimal beam tube potential for amorphous silicon/cesium iodide flat panel digital chest radiography(indirect DR).

The present invention relates to a multi-stack amorphous silicon solar battery, which adds a transparent reflection film between the stacks and belongs to the thin film solar battery making field.

The amorphous silicon nitride film between amorphous silicon film and glass substrate is found to have no any effects on the crystallization.

Study on the optical properties of amorphous silicon film by simulated annealing algorithm

This article is about how to use Electron Cyclotron Resonance Chemical Vapor Deposition (ECRCVD) method to prepare amorphous silicon nitride (SiN_x) film.

amorphous silicon造句

We developed a new process for low temperature crystallization of amorphous silicon films, by metal induced crystallization of amorphous silicon films at low temperature.

Every series breed specification, high efficiency solar energy producing single crystal silicon, polycrystal silicon and amorphous silicon vanquish the large-scale module and chip only.

This product use and weak light type of amorphous silicon solar battery power supply principle, the high quality, accord with the LCD flashing round will shine concept of environmental protection.

General rules for measurements of electrical characteristics of amorphous silicon solar cells

The cost of crystalline silicon and polycrystalline silicon solar cell is high steadily, amorphous silicon and amorphous silicon thin film solar cell has "optical-induced degradation".

It has developed a roll-to-roll manufacturing technique that forms thin-film amorphous silicon solar cells on thin sheets of stainless steel.

Surface modification of polyethylene terephthalate substrate by argon plasma treatment and its application to amorphous silicon solar cells

Plasma chemical vapor deposition in silane radio frequency glow discharge is a main fabrication technology of hydrogenated amorphous silicon (a-Si: h) films.

Quality control for multileaf collimator leaf position accuracy using amorphous silicon electronic portal imaging devices

Influence of barrier height of the front contact on the amorphous silicon and microcrystalline silicon heterojunction solar cells