“HEMT”簡單造句，HEMT造句子

Low Noise Amplifier Design Based on GaAs HEMT;

Optimization on gate-recessed AlGaN/GaN HEMT with low damage etching technique

由本文模型還推導出了HEMT溝道電導、跨導、柵電容和截止頻率等微波參數表達式。

A New AIGaN/GaN HEMT Design

Development and Application of InP HEMT and InP HBT

Using this model, the parameters of HEMT such as channel conductance, transconductance, gate capacitance, and cut-off frequency are derived.

一般來説，功率管器件的歐姆接觸觸點以及柵極是採用金材料製作，但是在基於GaN的HEMT中如果仍採用金材料製作這些結構則必須採用特殊的CMOS製程工藝。

Schottky Characteristic of High Performance AlGaN/GaN HEMT

Fujitsu points out that using GaN HEMT technology allows more than 6 times the output power of existing amplifiers using gallium-arsenide (GaAs) transistors.

The Research of RTD/HEMT/MSM s Optoelectrical Integration;

The Ohmic Contacts to GaN HEMT Epilayers and Its Applications to Hall Measurements;

Electromechanical Coupled Model on 2DEG in AlGaN/GaN HEMT

一種高*能的Q波段單片HEMT收發芯片已改進用於毫米波商用數字無線電系統。

高電子遷移率晶體管（HEMT）是基於異質結調製摻雜發展起來的一種高頻高速半導體器件。

Microwave Power Characteristics of AlGaN/GaN HEMT;

Study on AlGaN/GaN HEMT with Long Gate-Width and High Output Power at X Band

Study on the Key Fabrication Techniques of High-Power AlGaN/GaN HEMT;